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Semiconductors & Actives
Transistors
Picture 1 of 1
Picture 1 of 1
SIRA18DP-T1-GE3 RA18 Transistor N-MOSFET 30V 33A VISHAY
dariuszpeter (2006)
99.8% positive feedback
Price:
EUR 5.30
Approximately
RM 26.07
+ 5.00 shipping
Est. delivery
Fri, 29 Aug - Mon, 8 Sep
Estimated delivery Fri, 29 Aug - Mon, 8 Sep
Returns:
No returns, but backed by
eBay Money back guarantee
.
Condition:
New
New
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About this product
Produktkennzeichnungen
Marke
Vishay
Herstellernummer
SIRA18DPT1GE3
eBay Product ID (ePID)
3025380133
Produkt Hauptmerkmale
Verpackung
Schnittband
Maximale Basis-Emitter Spannung
3 V
Maximaler DC Kollektorstrom
8 A
Kollektor-Emitter-Spannung
-30 V, 30 V
Maximale Kollektor-Emitter Sättigungsspannung
1,0 V
Anzahl der Elemente pro Chip
1
Maximale Basis-Emitter Sättigungsspannung
1,8 V
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