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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metalli
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Item specifics
- Condition
- Brand New: A new, unread, unused book in perfect condition with no missing or damaged pages. See all condition definitionsopens in a new window or tab
- ISBN-13
- 9783319666068
- Type
- NA
- Publication Name
- NA
- ISBN
- 9783319666068
- Book Title
- Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
- Book Series
- Springer Theses Ser.
- Publisher
- Springer International Publishing A&G
- Item Length
- 9.3 in
- Publication Year
- 2017
- Format
- Hardcover
- Language
- English
- Illustrator
- Yes
- Genre
- Technology & Engineering, Science
- Topic
- Nanoscience, Physics / Condensed Matter, Nanotechnology & Mems, Electronics / Transistors
- Item Weight
- 144.1 Oz
- Item Width
- 6.1 in
- Number of Pages
- Xxiii, 164 Pages
About this product
Product Identifiers
Publisher
Springer International Publishing A&G
ISBN-10
3319666061
ISBN-13
9783319666068
eBay Product ID (ePID)
239681849
Product Key Features
Book Title
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
Number of Pages
Xxiii, 164 Pages
Language
English
Publication Year
2017
Topic
Nanoscience, Physics / Condensed Matter, Nanotechnology & Mems, Electronics / Transistors
Illustrator
Yes
Genre
Technology & Engineering, Science
Book Series
Springer Theses Ser.
Format
Hardcover
Dimensions
Item Weight
144.1 Oz
Item Length
9.3 in
Item Width
6.1 in
Additional Product Features
Number of Volumes
1 vol.
Table Of Content
Introduction.- Fabrication Techniques.- Characterization Techniques.- Thermal Oxidation of Gd2o3.- Plasma Oxidation of Gd2o3 and Sc2o3.- Gadolinium Scandate.- Interface Scavenging.- Gd2o3 on Inp Substrates.- Conclusions and Future Work.
Synopsis
This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallicGd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint., This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint.
LC Classification Number
QC173.458.S87
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