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Picture 1 of 1
Silicon-on-Ins
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Item specifics
- Condition
- Brand New: A new, unread, unused book in perfect condition with no missing or damaged pages. See all condition definitionsopens in a new window or tab
- ISBN-13
- 9789401088466
- Book Title
- Silicon-on-Insulator
- ISBN
- 9789401088466
- Subject Area
- Technology & Engineering, Science
- Publication Name
- Silicon-On-Insulator : Its Technology and Applications
- Publisher
- Springer Netherlands
- Item Length
- 9.3 in
- Subject
- Physics / Condensed Matter, Materials Science / Thin Films, Surfaces & Interfaces
- Publication Year
- 2011
- Series
- Advances in Solid State Technology Ser.
- Type
- Textbook
- Format
- Trade Paperback
- Language
- English
- Item Weight
- 16.7 Oz
- Item Width
- 6.1 in
- Number of Pages
- 304 Pages
About this product
Product Identifiers
Publisher
Springer Netherlands
ISBN-10
9401088462
ISBN-13
9789401088466
eBay Product ID (ePID)
175892332
Product Key Features
Number of Pages
304 Pages
Publication Name
Silicon-On-Insulator : Its Technology and Applications
Language
English
Subject
Physics / Condensed Matter, Materials Science / Thin Films, Surfaces & Interfaces
Publication Year
2011
Type
Textbook
Subject Area
Technology & Engineering, Science
Series
Advances in Solid State Technology Ser.
Format
Trade Paperback
Dimensions
Item Weight
16.7 Oz
Item Length
9.3 in
Item Width
6.1 in
Additional Product Features
Intended Audience
Scholarly & Professional
Series Volume Number
1
Number of Volumes
1 vol.
Illustrated
Yes
Table Of Content
1: Laser and Electron-Beam Recrystallization.- Growth Mechanisms and Defects in Si Layers Grown on SiO2 by Bridging (Lateral Seeded) Epitaxy.- Laser Crystallization of Polycrystalline Silicon by Controlling Lateral Thermal Profile.- Electron Beam Recrystallized SOI Structures.- Recrystallization of SOI Structures by Split Laser Beam.- Nucleation and Crystal Growth Characteristics in Energy Beam Crystallization of Silicon Islands.- Recrystallization of Silicon on Insulator with a Heat-Sink Structure.- Recrystallization of Polycrystalline Si over SiO2 through Strip Electron-Beam Irradiation.- 2: Zone Melting Recrystallization.- Zone-Melting Recrystallization of Si Films on SiO2.- Optically-Heated Zone Crystal Growth of Silicon Thin Films on Amorphous Substrates.- Recrystallization of Polycrystalline Silicon on Fused Silica Using an RF-Heated Carbon Susceptor.- Strip Heater Recrystallized SOI Structures.- Single Crystal Germanium Island Formation on Insulator by Zone Melting.- 3: Solid Phase Epitaxy.- Modeling of Interface Atomic Arrangement for Analysis of Solid Phase Epitaxy and Si-on-Insulator Structure.- Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns.- Formation of a Silicon-on-Insulator Structure by Solid-Phase Epitaxy.- Characterization of Solid Phase Epitaxially Grown Si Films on SiO2.- 4: Characterization and Device Applications.- Microstructural Characterization of Silicon-on-Insulator Structures.- High Speed SOI-CMOS Devices by Laser Recrystallization Technique.- Characterization of SOI Double Si Active Layers through Fabrication of Elementary Devices.- Device Application of SIMOX (Separation by IMplanted OXygen) Structure.- Author Index.
Synopsis
This volume contains papers presented during the US-Japan seminar on "Solid Phase Epitaxy and Interface Kinetics" held in Oiso, Japan, June 20-24, 1983. This seminar was co-sponsored by the National Science Foun dation and Japan Society for the Promotion of Science and co-chaired by Professor S. Furukawa, Tokyo Insitute of Technology, and Professor J. W. Mayer, Cornell University. Extensive topics such as solid phase epitaxy, growth mechanisms and interface kinetics, silicon-on-insulator structures, silicide-on-Si sturctures, novel nanometer and layered devices, and so on were discussed and more than 50 papers were presented. Most papers were original ones with brief reviews added for the convenience of the readers at the editor's request. The editor classified these papers into two groups and compiled two volumes; "Silicon-on-Insulator (SOl): Its Technology and Applications" and "Layered Structures and Interface Kinetics: Their Technology and Ap plications". This volume mainly contains the papers related to epitaxial growth of metal, insulator and semiconductor films, growth mechanisms, interface kinetics, properties and applications of silicide films, and novel nanometer and layered devices. These papers offer basic properties of the layered structures and possibility of various applications of the structures to present and future semiconductor devices. The editor is indebted to our fellow contributors who agreed to par take in publishing the proceedings of the seminar, to Japanese principal par ticipants of the seminar for encouraging him to have the seminar and to compile these volumes, to Professor H. Ishiwara for his secretarial work throughout the seminar and the publication., This volume contains papers presented during the US-Japan seminar on "Solid Phase Epitaxy and Interface Kinetics" held in Oiso, Japan, June 20-24, 1983. This seminar was co-sponsored by the National Science Foun- dation and Japan Society for the Promotion of Science and co-chaired by Professor S. Furukawa, Tokyo Insitute of Technology, and Professor J. W. Mayer, Cornell University. Extensive topics such as solid phase epitaxy, growth mechanisms and interface kinetics, silicon-on-insulator structures, silicide-on-Si sturctures, novel nanometer and layered devices, and so on were discussed and more than 50 papers were presented. Most papers were original ones with brief reviews added for the convenience of the readers at the editor's request. The editor classified these papers into two groups and compiled two volumes; "Silicon-on-Insulator (SOl): Its Technology and Applications" and "Layered Structures and Interface Kinetics: Their Technology and Ap- plications". This volume mainly contains the papers related to epitaxial growth of metal, insulator and semiconductor films, growth mechanisms, interface kinetics, properties and applications of silicide films, and novel nanometer and layered devices. These papers offer basic properties of the layered structures and possibility of various applications of the structures to present and future semiconductor devices. The editor is indebted to our fellow contributors who agreed to par- take in publishing the proceedings of the seminar, to Japanese principal par- ticipants of the seminar for encouraging him to have the seminar and to compile these volumes, to Professor H. Ishiwara for his secretarial work throughout the seminar and the publication.
LC Classification Number
TA418.7-418.76
Item description from the seller
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