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MG75J1BS11 Toshiba Power IGBT Module 75A 600V 200W
EUR 35.00
ApproximatelyRM 171.55
or Best Offer
Condition:
New
A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details.
3 available
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Shipping:
EUR 48.00 (approx RM 235.26) DHL Paket International.
Located in: Berlin, Germany
Delivery:
Estimated between Thu, 26 Jun and Thu, 10 Jul to 94104
Returns:
1 month return. Buyer pays for return shipping. If you use an eBay shipping label, it will be deducted from your refund amount.
Coverage:
Read item description or contact seller for details. See all detailsSee all details on coverage
(Not eligible for eBay purchase protection programmes)
Seller assumes all responsibility for this listing.
eBay item number:374943070758
Item specifics
- Condition
- Maximaler DC Kollektorstrom
- -1 A
- Maximale Kollektor-Basis Spannung
- 600 V
- Maximale Basis-Emitter Sättigungsspannung
- -1,1 V
- Transistor-Typ
- Leistungstransistor
- Herstellernummer
- MG75J1BS11, MG75J1BS1, MG75J1BS, MG75J1B, MG75J1, MG75J, MG75
- Marke
- Toshiba
- Produktart
- IGBT
- Anzahl der Elemente pro Chip
- 1
- Maximale Verlustleistung
- 200 W
- Kollektor-Emitter-Spannung
- 600 V
Item description from the seller
Seller business information
VAT number: DE 289104694
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Seller feedback (301)
- g***r (3164)- Feedback left by buyer.Past monthVerified purchaseAlles ok! Gerne wieder!
- a***o (178)- Feedback left by buyer.Past monthVerified purchaseImpecável.
- r***3 (100)- Feedback left by buyer.Past monthVerified purchaseAlles OK.