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Si Detectors and Characterizati
US $123.68
ApproximatelyRM 513.77
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eBay item number:364699145956
Item specifics
- Condition
- Brand New: A new, unread, unused book in perfect condition with no missing or damaged pages. See all condition definitionsopens in a new window or tab
- ISBN-13
- 9783030195304
- Type
- NA
- Publication Name
- NA
- ISBN
- 9783030195304
- Book Title
- Si Detectors and Characterization for HEP and Photon Science Experiment : How to Design Detectors by TCAD Simulation
- Publisher
- Springer International Publishing A&G
- Item Length
- 9.3 in
- Publication Year
- 2019
- Format
- Hardcover
- Language
- English
- Illustrator
- Yes
- Genre
- Computers, Technology & Engineering, Science
- Topic
- Measurement, Cad-Cam, Physics / Nuclear
- Item Weight
- 16.8 Oz
- Item Width
- 6.1 in
- Number of Pages
- Xvii, 183 Pages
About this product
Product Identifiers
Publisher
Springer International Publishing A&G
ISBN-10
3030195309
ISBN-13
9783030195304
eBay Product ID (ePID)
14038760101
Product Key Features
Book Title
Si Detectors and Characterization for HEP and Photon Science Experiment : How to Design Detectors by TCAD Simulation
Number of Pages
Xvii, 183 Pages
Language
English
Publication Year
2019
Topic
Measurement, Cad-Cam, Physics / Nuclear
Illustrator
Yes
Genre
Computers, Technology & Engineering, Science
Format
Hardcover
Dimensions
Item Weight
16.8 Oz
Item Length
9.3 in
Item Width
6.1 in
Additional Product Features
Number of Volumes
1 vol.
Table Of Content
Development OF Si DETECTORS FOR THE CMS LHC Experiments.- Physics and Technology of Si Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC.- Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL.- T-CAD Simulation for the designing of detectors.- Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL.- Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments.- CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS.- Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL.- Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation.- Appendices.
Synopsis
This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced surface damage and bulk damage by hadronic irradiation. Consisting of eleven chapters, it introduces various types of strip and pixel detector designs for the current upgrade, radiation, and dynamic range requirement of the experiments, and presents an overview of radiation detectors, especially Si detectors. It also describes the design of pixel detectors, experiments and characterization of Si detectors. The book is intended for researchers and master's level students with an understanding of radiation detector physics. It provides a concept that uses TCAD simulation to optimize the electrical performance of the devices used in the harsh radiation environment of the colliders and at XFEL., Development OF Si DETECTORS FOR THE CMS LHC Experiments.- Physics and Technology of Si Detectors.-Performance of MCz Si Material for p+nn+ and n+pp+ Si Sensor Design: Status and Development for HL-LHC: Status and Development for HL-LHC.- Development OF RADIATION HARD PIXEL DETECTORS FOR THE EUROPEAN XFEL.- T-CAD Simulation for the designing of detectors.- Development of Radiation Hard p+n Si Pixel Sensors for the European XFEL.- Analysis & Optimal Design of Radiation Hard p+n Si Pixel Detector for the Next generation Photon Science Experiments.- CapacitanceS in p+n silicon pixel sensors using 3-D TCAD simulation approach.-CHARACTERIZATION OF SI DETECTORS.- Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL.- Si Detector for HEP and Photon Science Experiments: How to Design Detectors by TCAD Simulation.- Appendices.
LC Classification Number
QC787.P3
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