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Ionizing Radiation Effects in MOS Devices and Circuits - Wiley 1989 hc no dj gd
US $97.77
ApproximatelyRM 418.28
Condition:
Good
A book that has been read but is in good condition. Very minimal damage to the cover including scuff marks, but no holes or tears. The dust jacket for hard covers may not be included. Binding has minimal wear. The majority of pages are undamaged with minimal creasing or tearing, minimal pencil underlining of text, no highlighting of text, no writing in margins. No missing pages.
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Located in: Redondo Beach, California, United States
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Estimated between Tue, 5 Aug and Thu, 7 Aug to 94104
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eBay item number:306419749154
Item specifics
- Condition
- Release Year
- 1989
- Book Title
- Ionizing Radiation Effects in MOS Devices and Circuits
- Personalized
- No
- ISBN
- 9780471848936
About this product
Product Identifiers
Publisher
Wiley & Sons, Incorporated, John
ISBN-10
047184893X
ISBN-13
9780471848936
eBay Product ID (ePID)
24038261945
Product Key Features
Number of Pages
608 Pages
Publication Name
Ionizing Radiation Effects in Mos Devices and Circuits
Language
English
Publication Year
1989
Subject
Electronics / Semiconductors
Type
Textbook
Subject Area
Technology & Engineering
Format
Hardcover
Dimensions
Item Height
1.3 in
Item Weight
34 Oz
Item Length
9.6 in
Item Width
6.7 in
Additional Product Features
Intended Audience
Scholarly & Professional
LCCN
88-029180
Dewey Edition
19
Illustrated
Yes
Dewey Decimal
621.3815/2
Table Of Content
Historical Perspective (H. Hughes). Electron-Hole Generation, Transport, and Trapping in SiO2 (F.McLean, et al.). Radiation-Induced Interface Traps (P. Winokur). Radiation Effects on MOS Devices and Circuits (P.Dressendorfer). Radiation-Hardening Technology (P. Dressendorfer). Process-Induced Radiation Effects (T. Ma). Source Considerations and Testing Techniques (K. Kerris). Transient-Ionization and Single-Event Phenomena (S. Kerns). Index.
Synopsis
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research., The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits., This is the first comprehensive overview describing the effects of ionizing radiation on MOS devices, and how to design, fabricate, and test integrated circuits intended for use in a radiation environment. It also addresses process-induced radiation effects in the fabrication of high-density circuits, and reviews the history of radiation-hard technology, providing background information for those new to the field. The book includes a comprehensive review of the literature, and an annotated listing of research activities in radiation-hardness research. The volume will be of benefit to semi conductor process development engineers, device and circuit development engineers, device physicists, reliability assurance engineers, project managers and stress analysts.
LC Classification Number
TK7871.99.M44I56
Item description from the seller
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