Picture 1 of 2


Gallery
Picture 1 of 2


Have one to sell?
New NTE2375 N-Ch MOSFET Enhancement Mode 100V 41A 230W High Speed Switch TO247
C $8.75
ApproximatelyRM 26.67
Condition:
New
A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details.
Oops! Looks like we're having trouble connecting to our server.
Refresh your browser window to try again.
Shipping:
C $7.07 (approx RM 21.55) Canada Post Tracked Packet - USA.
Located in: Milton, ON, Canada
Delivery:
Estimated between Tue, 9 Sep and Tue, 16 Sep to 94104
Returns:
30 days return. Buyer pays for return shipping. If you use an eBay shipping label, it will be deducted from your refund amount.
Coverage:
Read item description or contact seller for details. See all detailsSee all details on coverage
(Not eligible for eBay purchase protection programmes)
Seller assumes all responsibility for this listing.
eBay item number:276874002037
Item specifics
- Condition
- Single Pulse Avalanche Energy, EAS
- 830 mJ
- Configuration
- Single
- Avalanche Current, IAR
- 41 A
- Input Capacitance, Ciss
- 2800 pF Typ.
- Number of Elements per Chip
- 1
- MPN
- NTE2375
- Peak Diode Recovery dv/dt
- 5.5 V/ns
- Turn-Off Delay Time, td(off)
- 60 ns Typ.
- Continuous Drain Current
- 41 A Max @ +25 *C
- Gate Threshold Voltage VGS(th)
- 2 V Min., 4 V Max.
- Pulsed Drain Current
- 120 A
- Repetitive Avalanche Energy, EAR
- 19 mJ
- Number of Pins
- 3
- Mounting Style
- Through-Hole
- Drain-to-Source Breakdown Voltage, V(BR)DSS
- 100 V Min.
- Static Drain-to-Source On-Resistance, RDS(ON)
- 0.055 Ohm
- Fall Time, tf
- 81 ns Typ.
- Forward Transconductance, gfs
- 13 mhos Min.
- Package/Case
- TO247
- Transistor Category
- High Speed Switching
- Brand
- NTE Electronics, INC.
- Type
- N-Channel Enhancement Mode MOSFET
- Gate- to -Source Voltage, VGS
- +/- 20 V
- Turn-On Delay Time, td(on)
- 16 ns Typ.
- Maximum Power Dissipation
- 230 W
- Packaging
- Bag
- Rise Time, tr
- 120 ns Typ.
- Country/Region of Manufacture
- United States
Item description from the seller
Seller feedback (61)
- l***i (1605)- Feedback left by buyer.Past monthVerified purchaseGreat service!
- z***e (1385)- Feedback left by buyer.Past 6 monthsVerified purchaseThanks50 pcs ECG 409 DIP14 2.54 mm IC socket / machined pin/ gold plated contacts (#277095945377)
- a***a (297)- Feedback left by buyer.Past 6 monthsVerified purchaseThank you for a great value and excellent items. Packaged carefully and great communication too.
More to explore :
- N-Channel Enhancement Mode MOSFET Transistors,
- Unbranded N-Channel Enhancement Mode MOSFET Transistors,
- NTE N-Channel Enhancement Mode MOSFET Transistors,
- Power Transistor N-Channel Enhancement Mode MOSFET Transistors,
- P-Channel Enhancement Mode MOSFET Transistors,
- Enclosed Industrial Switching Mode Power Supplies (SMPS),
- Industrial Switching Mode Power Supplies (SMPS),
- ABB Industrial Switching Mode Power Supplies (SMPS),
- ASTEC Industrial Switching Mode Power Supplies (SMPS),
- Open Frame Industrial Switching Mode Power Supplies (SMPS)