The Gunn-Hilsum Effect -Shaw, Grubin, Solomon 1979 Hardcover

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Item specifics

Condition
Acceptable: A book with obvious wear. May have some damage to the cover but integrity still intact. ...
Subjects
Mathematics & Sciences
ISBN
9780126383508
Category

About this product

Product Identifiers

Publisher
Elsevier Science & Technology Books
ISBN-10
0126383502
ISBN-13
9780126383508
eBay Product ID (ePID)
4530631

Product Key Features

Number of Pages
Xviii, 250 Pages
Language
English
Publication Name
Gunn-Hilsum Effect
Publication Year
1979
Subject
Electronics / Solid State, Electronics / Semiconductors
Type
Textbook
Author
Melvin Shaw
Subject Area
Technology & Engineering
Format
Hardcover

Additional Product Features

Intended Audience
Scholarly & Professional
LCCN
76-045995
TitleLeading
The
Illustrated
Yes
Table Of Content
Preface List of Symbols Chapter 1 Negative Differential Mobility in Semiconductors 1-1 Introduction 1-2 The Velocity-Electric Field Characteristic 1-3 Response of an NDM Element to a Charge Fluctuation 1-4 Summary References Chapter 2 The NDM Element's Environment: Circuits and Boundaries 2-1 Introduction 2-2 The Local Environment 2-3 The Circuit 2-4 The Boundaries References Chapter 3 The Behavior of an NDM Element in a Circuit 3-1 Introduction 3-2 Summary of Results 3-3 Understanding the Threshold ConditionChapter 4 Numerical Studies of Negative Differential Mobility Elements 4-1 Introduction 4-2 Governing Equations 4-3 Difference Equations 4-4 Illustrative Resistive Circuit Calculations 4-5 Illustrative Calculations with a Circuit Containing Reactive Elements 4-6 Short Samples and Dynamic Cathode Boundary Fields References Chapter 5 Experimental Studies of Long Bulk NDM Samples at Low Frequencies 5-1 Introduction 5-2 Techniques of Sample Preparation for Bulk Samples 5-3 A Typical Gunn-Hilsum Effect Experiment with Long Bulk Samples of n-GaAs 5-4 Experimental Results and Discussion References Chapter 6 Analytical Studies of NDM Element Behavior: Small Signal Analysis 6-1 Introduction 6-2 Time-Independent Computations 6-3 Small Signal Time-Dependent Computations 6-4 Summary Appendix A Integration of the Field Perturbation Equation Appendix ? Impedance Calculation for Uniform e(x) and Nonuniform de (x, t) Appendix C Impedance Calculation for Nonuniform e(x) and de (x, t) Appendix D Relation between ?c(?) and de(?,?) Appendix ? Equality of lim??a?(?) and l'-1 d?/djo, Where ? is Defined by Eq. 6-11 ReferencesChapter 7 Negative Differential Mobility Devices 7-1 Introduction 7-2 Device Construction 7-3 Oscillation Principles for Short Devices 7-4 Amplification 7-5 The Gunn Diode in a Microwave Circuit 7-6 State-of-the-Art Considerations: Noise and Output Power 7-7 Summary References Author Index Subject Index
Synopsis
The Gunn-Hilsum Effect covers the physical principles controlling the operation of transferred electron devices. These devices have been proven quite useful in the generation, amplification, and processing of microwave signals well into tens of gigahertz range. Organized into seven chapters, the book focuses on the analytical and numerical approaches of the two vital aspects of device behavior for a given bulk semiconductor: boundary conditions or contacts and the local circuit environment. The opening chapter of this book discusses the negative differential mobility (NDM) characteristics for a range of electric fields in the velocity-field relation of specific semiconductors and the response of such a sample to a charge fluctuation, leading to the growth of stationary and/or traveling high electric field domains. The next two chapters describe how the boundary conditions and the circuit control the manifestation of current instabilities in such systems and how this control can be understood in a simple manner. Chapters 4 and 5 discuss the numerical and experimental investigations of comparatively long bulk samples, with an emphasis on the essential NDM semiconductor n-GaAs. These chapters also examine the production of different current-voltage relationships and instabilities by cathode contacts and the control of the oscillatory characteristics of an electrically unstable sample by different circuit conditions. Chapter 6 presents both time-independent and time-dependent computations, with the latter focusing on the small-signal impedance and stability aspects. The last chapter of this book addresses the construction and evaluation of typical short devices, describes how their oscillatory characteristics compare with the long samples studied in the first six chapters, and discusses the use of short devices as amplifiers. This book is an ideal source for device engineers and designers wishing to apply transferred electron devices in creative ways.
LC Classification Number
TK7872.G8.S5

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