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Have one to sell?
PTAB182002FC Thermally-Enha nced High Power RF LDMOS FET Transistor New Original
US $88.00
ApproximatelyRM 372.79
or Best Offer
Condition:
New
A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is applicable). Packaging should be the same as what is found in a retail store, unless the item was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag. See the seller's listing for full details.
More than 10 available
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Returns:
60 days return. Buyer pays for return shipping. If you use an eBay shipping label, it will be deducted from your refund amount.
Coverage:
Read item description or contact seller for details. See all detailsSee all details on coverage
(Not eligible for eBay purchase protection programmes)
Shop with confidence
Seller assumes all responsibility for this listing.
eBay item number:135690888006
Item specifics
- Condition
- Brand
- Infineon
- Maximum Base-Emitter Saturation Voltage
- 28V
- Maximum Power Dissipation
- 190 W
- Model
- PTAB182002FC
- Package/Case
- TO
- MPN
- PTAB182002FC
- Transistor Category
- Power Transistor
- UPC
- Does not apply
Item description from the seller
Seller feedback (6,002)
- l***r (260)- Feedback left by buyer.Past monthVerified purchaseGood FETs
- l***r (260)- Feedback left by buyer.Past monthVerified purchaseGood FETs
- 1***6 (223)- Feedback left by buyer.Past monthVerified purchaseitem as described, perfect
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